BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 5

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9506-55B_4
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.1
0.05
Thermal characteristics
δ = 0.5
0.2
0.02
single shot
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
-5
10
-4
Conditions
see
Rev. 04 — 23 July 2009
Figure 4
10
-3
10
-2
Min
-
-
BUK9506-55B
N-channel TrenchMOS FET
10
P
-1
Typ
-
60
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
Max
0.58
-
03nh84
T
t
p
t
1
Unit
K/W
K/W
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