BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 9

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
BUK9506-55B_4
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Gate charge waveform definitions
(A)
I
S
100
75
50
25
0
0.0
voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
0.2
Q
GS1
I
Q
D
GS
0.4
T
Q
j
= 175 ° C
GS2
Q
G(tot)
0.6
Q
GD
0.8
T
j
003aaa508
= 25 ° C
V
SD
03nj60
(V)
1.0
Rev. 04 — 23 July 2009
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
V
(V)
GS
(pF)
8000
6000
4000
2000
C
5
4
3
2
1
0
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
-1
20
1
V
C
C
C
DD
rss
oss
iss
= 14 V
BUK9506-55B
N-channel TrenchMOS FET
10
40
V
DD
V
© NXP B.V. 2009. All rights reserved.
Q
= 44 V
DS
G
(nC)
(V)
03nj67
03nj61
10
60
2
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