BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 3

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK9506-55B_4
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
I
(A)
150
100
D
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Capped at 75 A due to package
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
R
T
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
150
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 20 kΩ
T
= 25 °C; unclamped
mb
03nh85
( ° C)
200
sup
j
Rev. 04 — 23 July 2009
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
GS
Fig 2.
= 50 Ω; V
Figure 1
P
Figure 1
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
GS
and
= 5 V;
3
50
[1]
[2]
[2]
[1]
[2]
BUK9506-55B
100
N-channel TrenchMOS FET
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
55
55
15
146
75
75
587
258
175
175
146
75
587
679
03aa16
(°C)
200
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
3 of 13