FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 2

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
ΔT
ΔT
g
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
I
I
V
V
V
V
V
V
V
V
Q1/Q4:
V
Q2/Q3:
V
I
I
I
I
V
V
V
Q1/Q4:
V
Q2/Q3:
V
V
VGS = 0 V to 10 V
VGS = 0 V to -10 V Q1/Q4:
VGS = 0 V to 5 V
VGS = 0 V to -4.5 V
D
D
D
D
D
D
V
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
GS
DD
DD
GS
GS
= 250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= 250 μA, V
= -250 μA, V
= 250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= 50 V, V
= -40 V, V
= V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= -10 V, I
= -4.5 V, I
= -10 V, I
= 10 V, I
= -10 V, I
= 80 V, V
= -64 V, V
= ±20 V, V
= 50 V, I
= -40 V, I
= -10 V, R
= 10 V, R
DS
DS
Test Conditions
, I
, I
D
2
D
D
D
D
D
D
GS
D
D
= 2.4 A
D
D
GS
GS
GEN
GEN
= 250 μA
= -250 μA
D
= 3 A,
GS
GS
DS
= 3 A
= 3 A
= 3 A , T
GS
= -2.3 A, T
= -2.3 A,
= -2.3 A
= -2.3 A
= 0 V, f = 1 MHZ
= -2.1 A
= 0 V, f = 1 MHZ
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
= 6 Ω
V
I
Q2/Q3:
V
I
D
D
DD
DD
= 3 A
= -2.3A
J
= 125 °C
= 50 V,
= -40 V,
J
= 125 °C
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Type
Min
100
-80
-1
2
Typ
-1.6
118
147
161
188
273
-79
158
639
72
2.6
85
-8
41
46
24
3.8
4.7
1.3
2.8
7.5
1.9
2.7
2.9
1.6
6.4
0.8
1.6
0.8
2.6
3
5
6
6
22
13
±100
±100
Max
110
175
191
190
235
323
www.fairchildsemi.com
210
850
-1
-3
55
65
40
1
4
5
10
10
10
10
15
35
10
10
19
10
5
3
mV/°C
mV/°C
Units
mΩ
μA
μA
nA
nA
pF
pF
pF
nC
nC
nC
nC
V
V
S
ns
ns
ns
ns