FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 6

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics (P-Channel)
10
8
6
4
2
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0
Figure 10. On-Region Characteristics
Figure 12. Normalized On-Resistance
-75
1
Figure 14. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
V
DS
I
V
GS
D
= -4.5 V
-V
GS
-50
= -5 V
= - 2.3 A
vs Junction Temperature
= -10 V
DS
= - 10 V
1
, DRAIN TO SOURCE VOLTAGE (V)
-V
T
-25
GS
J
,
2
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
J
= 150
0
2
o
25
C
μ
T
s
J
3
= -55
50
T
3
J
o
= 25
C
75
μ
o
s
C
V
V
4
GS
o
GS
100 125 150
V
4
C )
GS
= -3.5 V
= -2.5 V
= -3 V
5
T
5
J
= 25
6
o
C unlenss otherwise noted
Figure 11. Normalized on-Resistance vs Drain
0.001
600
500
400
300
200
100
0.01
0.1
0
10
4
3
2
1
0
1
2
Figure 13. On-Resistance vs Gate to
Forward Voltage vs Source Current
0
0
Figure 15. Source to Drain Diode
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
Current and Gate Voltage
= 0 V
-V
-V
0.2
V
SD
GS
GS
, BODY DIODE FORWARD VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
T
4
= -2.5 V
-
Source Voltage
J
I
I
D
D
= 150
T
T
,
J
= -2.3 A
J
DRAIN CURRENT (A)
= 125
0.4
= 25
o
C
4
o
o
C
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
V
V
μ
GS
GS
s
= -4.5 V
= -3 V
6
0.8
V
T
GS
J
T
8
= -55
= -3.5 V
J
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= 25
V
8
1.0
GS
o
C
o
= -10 V
C
μ
s
10
1.2
10