FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 8

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Typical Characteristics
0.0005
0.001
2000
1000
0.01
100
0.1
0.1
10
1
2
1
10
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
10
10
0.2
0.1
0.05
0.02
0.01
Figure 20. Junction-to-Ambient Transient Thermal Response Curve
-3
-3
Figure 19. Single Pulse Maximum Power Dissipation
T
J
= 25
10
10
-2
-2
SINGLE PULSE
R
o
C unlenss otherwise noted
θ
JA
= 160
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
o
C/W
10
10
-1
-1
8
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
SINGLE PULSE
R
T
θJA
DM
A
θ
1
JA
= 25
/t
x R
2
100
100
= 160
θJA
o
t
C
1
+ T
o
t
2
C/W
A
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1000
1000