FDMQ8203 Fairchild Semiconductor, FDMQ8203 Datasheet - Page 3

• Manufacturer Part Number: FDMQ8203
• Description: MOSFET Power Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMQ8203

• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 85 mOhms, 161 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 100 V, - 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A, - 2.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: MLP
• Fall Time: 1.9 ns, 2.7 ns
• Gate Charge Qg: 2.9 nC, 13 nC
• Rise Time: 1.3 ns, 2.8 ns
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
V
t
Q
rr
SD
rr
by the user's board design.
Symbol
θJA
is determined with the device mounted on a 1 in
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a.
50 °C/W when mounted on a 1 in
pad of 2 oz copper, the board
designed Q1+Q3 or Q2+Q4.
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
V
V
Q1/Q4:
I
Q2/Q3:
I
F
F
GS
GS
= 3 A, di/dt = 100 A/μs
= -2.3 A, di/dt = 100 A/μs
= 0 V, I
= 0 V, I
2
Test Conditions
3
S
S
= 3 A
= -2.3 A
(Note 2)
(Note 2)
b.
160 °C/W when mounted on
minimum pad of 2 oz copper, the
board designed Q1+Q3 or Q2+Q4.
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Type
θJC
is guaranteed by design while R
Min
-0.82
Typ
0.86
32
26
21
26
a
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Max
-1.3
1.3
52
42
34
42
θCA
is determined
Units
nC
ns
V