LH28F008BVT-BTL10 Sharp Electronics, LH28F008BVT-BTL10 Datasheet - Page 10

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LH28F008BVT-BTL10

Manufacturer Part Number
LH28F008BVT-BTL10
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008BVT-BTL10

Cell Type
NOR
Density
8Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
3.3/5/12V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F008BVT-BTL10
Manufacturer:
SHARP
Quantity:
20 000
3.5 Read Identifier Codes Operation
The
manufacturer code and device code (see Figure 4). Using
the manufacturer and device codes, the system CPU can
automatically match the device with its proper algorithms.
[A
FFFFF
00002
00001
00000
19
-A
Figure 4. Device Identifier Code Memory Map
read
0
]
identifier
Reserved for Future Implementation
Manufacturer Code
codes
Device Code
operation
outputs
the
3.6 Write
Writing commands to the CUI enable reading of device
data and identifier codes. They also control inspection and
clearing of the status register. When V
V
erasure and byte write.
The Block Erase command requires appropriate command
data and an address within the block to be erased. The
Byte Write command requires the command and address
of the location to be written.
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are active. The
address and data needed to execute a command are latched
on the rising edge of WE# or CE# (whichever goes high
first). Standard microprocessor write timings are used.
Figures 12 and 13 illustrate WE# and CE# controlled write
operations.
4 COMMAND DEFINITIONS
When the V
status register, identifier codes, or blocks are enabled.
Placing V
and byte write operations.
Device operations are selected by writing specific
commands into the CUI. Table 4 defines these commands.
PP
=V
PPH1/2/3
PPH1/2/3
PP
, the CUI additionally controls block
voltage V
on V
PP
PPLK
enables successful block erase
, Read operations from the
CC
=2.7V-3.6V and
Rev. 1.1

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