S29GL032M10TAIR10 AMD (ADVANCED MICRO DEVICES), S29GL032M10TAIR10 Datasheet - Page 3

• Manufacturer Part Number: S29GL032M10TAIR10
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of S29GL032M10TAIR10

• Lead Free Status / Rohs Status: Not Compliant

This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A,
S29GL064A, S29GL128P, and S29GL256P supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M respectively.
These are the factory-recommended migration paths. Please refer to the S29GL-A and S29GL-P Datasheets for specifications
and ordering information. Availability of this document is retained for reference and historical purposes only.
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
S29GL-M MirrorBit
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit Process Technology
Data Sheet
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— 256 Mb: 512 32-Kword (64 Kbyte) sectors
— 128 Mb: 256 32-Kword (64 Kbyte) sectors
— 64 Mb (uniform sector models): 128 32-Kword
— 64 Mb (boot sector models): 127 32-Kword
— 32 Mb (uniform sector models): 64 32-Kword
— 32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
100,000 erase cycles typical per sector
20-year data retention typical
High performance
— 90 ns access time (128 Mb, 64 Mb, 32 Mb),
— 4-word/8-byte page read buffer
— 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
— 30 ns page read times (256 Mb)
— 16-word/32-byte write buffer
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
(64-Kbyte) sectors or 128 32 Kword sectors
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
(64-Kbyte) sectors of 64 32-Kword sectors
sectors + 8 4-Kword (8-Kbyte) boot sectors
power supply flash, and superior inadvertent write
protection
100 ns access time (256 Mb)
Publication Number S29GL-M_00
TM
Flash Family
Revision B
Software & Hardware Features
Amendment 8
— 16-word/32-byte write buffer reduces overall
Low power consumption (typical values at 3.0 V,
5 MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
— Unlock Bypass Program command reduces overall
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
programming time for multiple-word updates
before programming operation is completed
sectors before an erase operation is completed
system to identify and accommodate multiple flash
devices
multiple-word programming time
preventing write operations within a sector group
charging code in locked sectors
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
erase cycle completion
Issue Date February 7, 2007
ID
-level method of