N28F001BXT150 Intel, N28F001BXT150 Datasheet - Page 37

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N28F001BXT150

Manufacturer Part Number
N28F001BXT150
Description
Manufacturer
Intel
Datasheet

Specifications of N28F001BXT150

Density
1Mb
Access Time (max)
150ns
Interface Type
Parallel
Boot Type
Top
Address Bus
17b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
PLCC
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
128K
Supply Current
30mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N28F001BXT150
Manufacturer:
INT
Quantity:
3 000
Part Number:
N28F001BXT150
Manufacturer:
INT
Quantity:
3 000
Part Number:
N28F001BXT150
Manufacturer:
INTEL
Quantity:
5 510
NOTES:
1.
2.
3.
4.
5.
6.
7.
10.8.1
NOTES:
1.
2.
t
t
GHHEL
EHGH
Symbol
Chip-enable controlled writes: write operations are driven by the valid combination of CE# and WE#. In systems where
CE# defines the write pulse width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should
be measured relative to the CE# waveform.
Sampled, not 100% tested.
Refer to Table 3 for valid A
Refer to Table 3 for valid D
Program and erase durations are measured to completion (SR.7 = 1). V
program/erase success (SR.3/4/5 = 0).
For boot block programming and erasure, RP# should be held at V
(SR.3/4/5 = 0).
Alternate boot block access method.
Sampled, not 100% tested.
Alternate boot block access method.
Versions
PROM PROGRAMMER SPECIFICATIONS
OE# V
OE# V
HH
HH
Setup to CE# Going Low
Hold from CE# High
IN
IN
Parameter
for byte programming or block erasure.
for byte programming or block erasure.
V
CC
±10%
Notes
1, 2
1, 2
HH
–120
until determination of program/erase success
Min
480
480
PP
should be held at V
Max
Min
480
480
PPH
until determination of
–150
Max
28F001BX
Unit
ns
ns
37

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