S29GL256M10TAIR10 Spansion Inc., S29GL256M10TAIR10 Datasheet - Page 59

• Manufacturer Part Number: S29GL256M10TAIR10
• Manufacturer: Spansion Inc.

Specifications of S29GL256M10TAIR10

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25/24Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 32M/16M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

Common Flash Memory Interface (CFI)
February 7, 2007 S29GL-M_00_B8
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data. The system can read CFI informa-
tion at the addresses given in
system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
in
reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Alterna-
tively, contact your sales representative for copies of these documents.
Note: CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the
Ordering Information tables to obtain the VCC range for particular part numbers. See the
Performance
Table 30
Addresses (x16)
Addresses(x16)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
1Ah
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
table for typical timeout specifications.
through
Table
D a t a
Addresses (x8)
Addresses(x8)
S29GL-M MirrorBit
3Ah
3Ch
4Ah
4Ch
36h
38h
3Eh
40h
42h
44h
46h
48h
33. The system must write the reset command to return the device to
Table 30. CFI Query Identification String
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Table 30
Table 31. System Interface String
S h e e t
0027h
0036h
0000h V
0000h V
0007h Reserved for future use
0007h
000Ah Typical timeout per individual block erase 2
0000h
0001h Reserved for future use
0005h Max. timeout for buffer write 2
0004h Max. timeout per individual block erase 2
0000h
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Data
through
TM
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
Typical timeout for Min. size buffer write 2
(00h = not supported)
Typical timeout for full chip erase 2
(00h = not supported)
Max. timeout for full chip erase 2
(00h = not supported)
CC
CC
PP
PP
Flash Family
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table
(00h = none exists)
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Table
33. To terminate reading CFI data, the
Description
PP
Description
PP
N
pin present)
times typical
pin present)
N
times typical
N
Erase and Programming
ms
N
N
times typical
N
µs
ms
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