TE28F128J3C150 Intel, TE28F128J3C150 Datasheet - Page 43
![no-image](/images/manufacturer_photos/0/3/336/intel_sml.jpg)
TE28F128J3C150
Manufacturer Part Number
TE28F128J3C150
Description
Manufacturer
Intel
Datasheet
1.TE28F128J3C150.pdf
(72 pages)
Specifications of TE28F128J3C150
Cell Type
NOR
Density
128Mb
Access Time (max)
150ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F128J3C150
Manufacturer:
INTEL
Quantity:
20 000
11.3
11.4
Datasheet
After the final buffer data is given, a Write Confirm command is issued. This initiates the WSM
(Write State Machine) to begin copying the buffer data to the flash array. If a command other than
Write Confirm is written to the device, an “Invalid Command/Sequence” error will be generated
and SR.5 and SR.4 will be set. For additional buffer writes, issue another Write to Buffer Setup
command and check XSR.7.
If an error occurs while writing, the device will stop writing, and SR.4 will be set to indicate a
program failure. The internal WSM verify only detects errors for “1”s that do not successfully
program to “0”s. If a program error is detected, the Status Register should be cleared. Any time
SR.4 and/or SR.5 is set (e.g., a media failure occurs during a program or an erase), the device will
not accept any more Write to Buffer commands. Additionally, if the user attempts to program past
an erase block boundary with a Write to Buffer command, the device will abort the write to buffer
operation. This will generate an “Invalid Command/Sequence” error and SR.5 and SR.4 will be set.
Reliable buffered writes can only occur when V
while V
V
programming requires that the corresponding block lock-bit be reset. If a buffered write is
attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set.
Program Suspend
The Program Suspend command allows program interruption to read data in other flash memory
locations. Once the programming process starts (either by initiating a write to buffer or byte/word
program operation), writing the Program Suspend command requests that the WSM suspend the
program sequence at a predetermined point in the algorithm. The device continues to output SRD
when read after the Program Suspend command is written. Polling SR.7 can determine when the
programming operation has been suspended. When SR.7 = 1, SR.2 should also be set, indicating
that the device is in the program suspend mode. STS in level RY/BY# mode will also transition to
V
At this point, a Read Array command can be written to read data from locations other than that
which is suspended. The only other valid commands while programming is suspended are Read
Query, Read Status Register, Clear Status Register, Configure, and Program Resume. After a
Program Resume command is written, the WSM will continue the programming process. SR.2 and
SR.7 will automatically clear and STS in RY/BY# mode will return to V
Resume command is written, the device automatically outputs SRD when read. V
at V
programming) while in program suspend mode. Refer to
Flowchart” on page
Program Resume
To resume (i.e., continue) a program suspend operation, execute the Program Resume command.
The Resume command can be written to any device address. When a program operation is nested
within an erase suspend operation and the Program Suspend command is issued, the device will
suspend the program operation. When the Resume command is issued, the device will resume and
complete the program operation. Once the nested program operation is completed, an additional
Resume command is required to complete the block erase operation. The device supports a
maximum suspend/resume of two nested routines. See
Flowchart” on page
PEN
OH
PENH
. Specification t
voltages produce spurious results and should not be attempted. Finally, successful
PEN
and V
≤ V
PENLK
CC
must remain at valid V
WHRH1
62.
62).
, SR.4 and SR.3 will be set. Buffered write attempts with invalid V
defines the program suspend latency.
CC
levels (the same V
PEN
= V
Figure 21, “Program Suspend/Resume
PENH
Figure 21, “Program Suspend/Resume
. If a buffered write is attempted
PEN
and V
OL
CC
256-Mbit J3 (x8/x16)
. After the Program
levels used for
PEN
must remain
CC
and
43