TE28F400B3B90 Intel, TE28F400B3B90 Datasheet - Page 37

• Manufacturer Part Number: TE28F400B3B90
• Manufacturer: Intel

Specifications of TE28F400B3B90

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 18b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 256K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

4.6
Preliminary
W10
W11
W1
W2
W3
W4
W5
W6
W7
W8
W9
#
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PHWL
PHEL
ELWL
WLEL
ELEH
WLWH
DVWH
DVEH
AVWH
AVEH
WHEH
EHWH
WHDX
EHDX
WHAX
EHAX
WHWL /
EHEL
VPWH
VPEH
QVVL
Sym
/
/
/
/
/
/
/
/
/
AC Characteristics —Write Operations
NOTES:
1. Refer to command definition table
2. Write pulse width (t
3. Sampled, but not 100% tested.
RP# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold Time from WE# (CE#) High
Data Hold Time from WE# (CE#) High
Address Hold Time from WE# (CE#) High
WE# (CE#) Pulse Width High
V
V
PP
PP
high (whichever goes high first). Hence, t
high (t
(whichever goes low first). Hence, t
Read timing characteristics during program suspend and erase suspend are the same as during read-only
operations.
See
See
Setup to WE# (CE#) Going High
Hold from Valid SRD
Figure 6
Figure 9, “AC Waveform: Program and Erase Operations” on page
WPH
) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
Parameter
for timing measurements and maximum allowable input slew rate.
WP
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going
(Table
WPH
= t
WP
6) for valid A
WHWL
Product
Density
= t
Note
WLWH
V
1
2
2
2
2
1
3
3
= t
CC
EHEL
= t
IN
3.0 V –
ELEH
3.6 V
or D
Min
= t
600
200
70
50
70
30
0
0
0
0
0
WHEL
IN
= t
90 ns
.
WLEH
= t
2.7 V –
3.6 V
EHWL
Min
600
200
70
50
70
30
= t
0
0
0
0
0
36.
4/8 Mbit
ELWH
.
. Similarly, write pulse width
3.0 V –
3.6 V
Min
600
200
70
60
70
30
0
0
0
0
0
110 ns
2.7 V –
3.6 V
Min
600
200
70
60
70
30
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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