TE28F400B3B90 Intel, TE28F400B3B90 Datasheet - Page 9

• Manufacturer Part Number: TE28F400B3B90
• Manufacturer: Intel

Specifications of TE28F400B3B90

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 18b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 256K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

2.0
2.1
Preliminary
Figure 1. 40-Lead TSOP Package for x8 Configurations
Product Description
This section explains device pin description and package pinouts.
Package Pinouts
The 3-Volt Advanced Boot Block flash memory is available in 40-lead TSOP (x8,
48-lead TSOP (x16,
48-ball VF BGA (x16,
upgrades have been circled.
NOTES:
1. 40-Lead TSOP available for 8- and 16-Mbit densities only.
2. Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on
Pin 38.
4 M
A
A
A
A
A
A
A
A
WE#
RP#
V
WP#
A
A
A
A
A
A
A
A
16
15
14
13
12
11
9
8
PP
18
7
6
5
4
3
2
1
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Figure
Figure
2), 48-ball BGA(x8 and x16,
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
5) packages. In all figures, pin changes necessary for density
Advanced Boot Block
10 mm x 20 mm
40-Lead TSOP
TOP VIEW
Figure 4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
and
Figure
A
GND
A
A
A
DQ
DQ
DQ
DQ
V
V
NC
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
5, respectively), and
17
20
19
10
CCQ
CC
0
7
6
5
4
3
2
1
0
Figure
16 M
8 M
1),
0580_01
3