LPC1754FBD80,518 NXP Semiconductors, LPC1754FBD80,518 Datasheet - Page 48

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LPC1754FBD80,518

Manufacturer Part Number
LPC1754FBD80,518
Description
IC MCU 32BIT 128KB FLASH 80LQFP
Manufacturer
NXP Semiconductors
Series
LPC17xxr
Datasheet

Specifications of LPC1754FBD80,518

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
100MHz
Connectivity
CAN, I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART, USB OTG
Peripherals
Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, WDT
Number Of I /o
52
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 3.6 V
Data Converters
A/D 6x12b, D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Package
80LQFP
Device Core
ARM Cortex M3
Family Name
LPC1700
Maximum Speed
100 MHz
Operating Supply Voltage
3.3 V
Data Bus Width
32 Bit
Number Of Programmable I/os
52
Interface Type
CAN/I2C/SPI/UART/USB
On-chip Adc
6-chx12-bit
Number Of Timers
4
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LPC1754FBD80,518
Manufacturer:
NXP Semiconductors
Quantity:
10 000
Part Number:
LPC1754FBD80,518
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
11. Dynamic characteristics
Table 8.
T
[1]
[2]
Table 9.
T
[1]
[2]
LPC1759_58_56_54_52_51
Product data sheet
Symbol
N
t
t
t
Symbol
f
T
t
t
t
t
ret
er
prog
osc
CHCX
CLCX
CLCH
CHCL
amb
amb
Fig 14. External clock timing (with an amplitude of at least V
cy(clk)
endu
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
=
=
40
40
Flash characteristics
Dynamic characteristic: external clock
C to +85
C to +85
11.1 Flash memory
11.2 External clock
Parameter
endurance
retention time
erase time
programming time
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
C, unless otherwise specified.
C; V
DD(3V3)
over specified ranges.
All information provided in this document is subject to legal disclaimers.
sector or multiple
Conditions
powered
unpowered
consecutive sectors
t
CHCL
Rev. 7 — 29 March 2011
[1]
Conditions
t
CLCX
i(RMS)
LPC1759/58/56/54/52/51
T
cy(clk)
= 200 mV)
t
CLCH
t
[1]
[2]
CHCX
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
32-bit ARM Cortex-M3 microcontroller
Min
10000
10
20
95
0.95
 0.4
 0.4
002aaa907
Typ
100000
-
100
1
-
Typ
-
-
-
-
-
-
[2]
© NXP B.V. 2011. All rights reserved.
1.05
Max
-
-
-
105
Max
25
1000
-
-
5
5
Unit
years
years
ms
ms
MHz
48 of 74
cycles
Unit
ns
ns
ns
ns
ns

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