IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet - Page 2

• Manufacturer Part Number: IXYB82N120C3H1
• Description: IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
• Manufacturer: IXYS

Specifications of IXYB82N120C3H1

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 1040 W
• Package / Case: PLUS-264
• Mounting Style: Through Hole
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.35
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Details

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g(on)
ge
gc
J
J
s
f
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
-di
Test Conditions
I
I
F
C
C
C
F
C
CE
CE
CE
= 60A, V
= 82A, V
= 60A, V
= 80A, V
= 80A, V
F
= 60A, V
/dt = 700A/μs, V
= 25V, V
= 0.5 • V
= 0.5 • V
GE
GE
GE
GE
GE
CE
GE
CES
CES
= 0V,
= 0V, Note 1
= 15V, V
= 15V
= 15V
= 10V, Note 1
= 0V, f = 1MHz
, R
, R
4,835,592
4,881,106
J
J
G
G
= 25°C
= 125°C
R
= 2
= 2
= 600V
CE
Ω
Ω
= 0.5 • V
4,931,844
5,017,508
5,034,796
T
T
J
J
= 125°C
= 125°C
CES
5,049,961
5,063,307
5,187,117
Characteristic Values
30
Min.
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4060
4.95
2.78
7.45
3.70
0.13
Typ.
Typ.
285
110
215
192
200
420
1.9
50
26
84
29
78
93
29
90
95
41
CE
(clamp), T
Max.
Max.
5.00
0.12 °C/W
0.35 °C/W
280
6,404,065 B1
6,534,343
6,583,505
2.7
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXYB82N120C3H1
PLUS264
6,727,585
6,771,478 B2 7,071,537
TM
(IXYB) Outline
7,005,734 B2
7,063,975 B2
Pin 1
Pin 2,4 = Emitter
Pin 3
7,157,338B2
= Gate
= Collector