IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet - Page 7

• Manufacturer Part Number: IXYB82N120C3H1
• Description: IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
• Manufacturer: IXYS

Specifications of IXYB82N120C3H1

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 1040 W
• Package / Case: PLUS-264
• Mounting Style: Through Hole
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.35
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Details

IXYB82N120C3H1
Fig. 21.
Fig. 22.
Fig. 23.
Fig. 24.
Fig. 26. transient thermal impedance
Fig. 25.
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