IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet - Page 3

• Manufacturer Part Number: IXYB82N120C3H1
• Description: IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
• Manufacturer: IXYS

Specifications of IXYB82N120C3H1

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 1040 W
• Package / Case: PLUS-264
• Mounting Style: Through Hole
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.35
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Details

© 2011 IXYS CORPORATION, All Rights Reserved
160
140
120
100
160
140
120
100
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
80
60
40
20
80
60
40
20
0
0
0
5
0
0.5
0.5
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
Fig. 5. Collector-to-Emitter Voltage vs.
7
1
1.5
41A
1.5
8
2
Gate-to-Emitter Voltage
82A
2.5
9
2
V
CE
V
V
CE
I
GE
3
- Volts
C
- Volts
2.5
= 164A
10
- Volts
V
V
3.5
GE
GE
= 15V
= 15V
13V
11V
10V
9V
11
13V
11V
10V
9V
3
4
4.5
3.5
12
J
J
= 125ºC
= 25ºC
5
13
4
T
J
5.5
= 25ºC
8V
7V
6V
5V
8V
7V
6V
5V
4.5
14
6
6.5
15
5
300
250
200
150
100
160
140
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
0
3
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
3.5
13V
12V
= 15V
-25
5
4
Fig. 4. Dependence of V
0
11V
4.5
Fig. 6. Input Admittance
Junction Temperature
10V
10
T
T
IXYB82N120C3H1
J
J
25
- Degrees Centigrade
= 125ºC
- 40ºC
5
V
25ºC
CE
V
GE
- Volts
5.5
50
15
9V
- Volts
I
C
= 164A
I
C
I
6
C
= 82A
75
= 41A
CE(sat)
20
8V
6.5
100
on
7
J
7V
25
= 25ºC
125
7.5
6V
5V
150
30
8