IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet - Page 6

• Manufacturer Part Number: IXYB82N120C3H1
• Description: IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
• Manufacturer: IXYS

Specifications of IXYB82N120C3H1

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 1040 W
• Package / Case: PLUS-264
• Mounting Style: Through Hole
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.35
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
160
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
25
2
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
R
V
t
t
T
V
r i
G
CE
r i
J
CE
= 125ºC, V
4
= 2
= 600V
= 600V
Ω
, V
50
GE
6
GE
= 15V
t
t
Junction Temperature
d(on)
d(on)
= 15V
T
J
I
Gate Resistance
- Degrees Centigrade
- - - -
8
- - - -
C
R
= 80A
I
G
C
- Ohms
= 40A
10
75
12
100
I
I
14
C
C
= 40A
= 80A
16
125
18
60
55
50
45
40
35
30
25
20
36
34
32
30
28
26
24
22
140
120
100
80
60
40
20
40
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
= 2
= 600V
50
Ω
, V
T
GE
J
= 125ºC
t
= 15V
d(on)
60
Collector Current
- - - -
IXYB82N120C3H1
I
C
70
- Amperes
80
T
J
= 25ºC
90
IXYS REF: IXY_82N120C3(8M)05-10-11
100
60
50
40
30
20
10
0