IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet - Page 4

• Manufacturer Part Number: IXYB82N120C3H1
• Description: IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
• Manufacturer: IXYS

Specifications of IXYB82N120C3H1

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 1040 W
• Package / Case: PLUS-264
• Mounting Style: Through Hole
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 42
• Rthjc, Max, Diode (k/w): 0.35
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
10
0.1
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
20
5
10
40
Fig. 7. Transconductance
Fig. 9. Capacitance
15
60
0.0001
I
V
C
CE
- Amperes
20
- Volts
80
100
25
Fig. 11. Maximum Transient Thermal Impedance
T
J
120
30
= - 40ºC
25ºC
125ºC
C ies
C oes
C res
140
35
0.001
Pulse Width - Second
160
40
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
300
CE
20
J
G
= 82A
= 10mA
= 125ºC
= 2
0.01
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
40
400
60
500
Fig. 8. Gate Charge
80
IXYB82N120C3H1
Q
600
G
- NanoCoulombs
V
100
CE
700
- Volts
120
800
0.1
140
900
160
1000
180
1100
200
1200
220
1