AT32UC3A464 Atmel Corporation, AT32UC3A464 Datasheet - Page 945

• Manufacturer Part Number: AT32UC3A464
• Manufacturer: Atmel Corporation

Specifications of AT32UC3A464

• Flash (kbytes): 64 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 66 MHz
• Cpu: 32-bit AVR
• Hardware Qtouch Acquisition: No
• Usb Transceiver: 1
• Usb Speed: Hi-Speed
• Usb Interface: Device + OTG
• Spi: 6
• Twi (i2c): 2
• Uart: 4
• Ssc: 1
• Sd / Emmc: 2
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 128
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.0 to 3.6
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Timers: 6
• Output Compare Channels: 6
• Input Capture Channels: 6
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

34.5.3.4
32072G–11/2011
MEMORY_WORD_ACCESS
Table 34-19. MEMORY_SIZED_ACCESS Details (Continued)
This instruction allows access to the entire Service Access Bus data area. Data is accessed
through the 34 MSB of the SAB address, a direction bit, and 32 bits of data. This instruction is
identical to MEMORY_SIZED_ACCESS except that it always does word sized accesses. The
size field is implied, and the two lowest address bits are removed and not scanned in.
Note: This instruction was previously known as MEMORY_ACCESS, and is provided for back-
wards compatibility.
The data register is alternately interpreted by the SAB as an address register and a data regis-
ter. The SAB starts in address mode after the MEMORY_WORD_ACCESS instruction is
selected, and toggles between address and data mode each time a data scan completes with
the busy bit cleared.
Starting in Run-Test/Idle, SAB data is accessed in the following way:
For any operation, the full 34 bits of the address must be provided. For write operations, 32 data
bits must be provided, or the result will be undefined. For read operations, shifting may be termi-
nated once the required number of bits have been acquired.
Table 34-20. MEMORY_WORD_ACCESS Details
Instructions
DR output value (Address phase)
DR output value (Data read phase)
DR output value (Data write phase)
Instructions
IR input value
IR output value
DR Size
DR input value (Address phase)
DR input value (Data read phase)
DR input value (Data write phase)
1. Select the IR Scan path.
2. In Capture-IR: The IR output value is latched into the shift register.
3. In Shift-IR: The instruction register is shifted by the TCK input.
4. Return to Run-Test/Idle.
5. Select the DR Scan path.
6. In Shift-DR: Scan in the direction bit (1=read, 0=write) and the 34-bit address of the
7. Go to Update-DR and re-enter Select-DR Scan.
8. In Shift-DR: For a read operation, scan out the contents of the addressed area. For a
9. Return to Run-Test/Idle.
data to access.
write operation, scan in the new contents of the area.
Details
xxxxxxx xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxeb
xxxxxeb dddddddd dddddddd dddddddd dddddddd
xxxxxxx xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxeb
Details
10001 (0x11)
peb01
35 bits
aaaaaaaa aaaaaaaa aaaaaaaa aaaaaaaa aar
xxxxxxxx xxxxxxxx xxxxxxxx xxxxxxxx xxx
dddddddd dddddddd dddddddd dddddddd xxx
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