AT90PWM316 Atmel Corporation, AT90PWM316 Datasheet - Page 20

• Manufacturer Part Number: AT90PWM316
• Manufacturer: Atmel Corporation

Specifications of AT90PWM316

• Flash (kbytes): 16 Kbytes
• Pin Count: 32
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 12
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 27
• Ext Interrupts: 4
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Uart: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 11
• Adc Resolution (bits): 10
• Adc Speed (ksps): 125
• Analog Comparators: 3
• Resistive Touch Screen: No
• Dac Channels: 1
• Dac Resolution (bits): 10
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 1
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 105
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 5
• Output Compare Channels: 16
• Input Capture Channels: 1
• Pwm Channels: 12
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

6.3
6.3.1
7710F–AVR–09/11
EEPROM Data Memory
EEPROM Read/Write Access
Figure 6-3.
The AT90PWM216/316 contains 512 bytes of data EEPROM memory. It is organized as a sep-
arate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI and Parallel data downloading to the EEPROM, see
Downloading” on page
mands” on page 285
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
For details on how to avoid problems in these situations
tion” on page 25.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
CC
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Address
clk
Data
Data
WR
CPU
RD
respectively.
296, and
Compute Address
“Parallel Programming Parameters, Pin Mapping, and Com-
T1
Memory Access Instruction
Table
Address valid
T2
seeSee “Preventing EEPROM Corrup-
6-2. A self-timing function, however,
AT90PWM216/316
Next Instruction
T3
“Serial
20