AT90PWM316 Atmel Corporation, AT90PWM316 Datasheet - Page 22

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AT90PWM316

Manufacturer Part Number
AT90PWM316
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of AT90PWM316

Flash (kbytes)
16 Kbytes
Pin Count
32
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
12
Hardware Qtouch Acquisition
No
Max I/o Pins
27
Ext Interrupts
4
Usb Speed
No
Usb Interface
No
Spi
1
Uart
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
11
Adc Resolution (bits)
10
Adc Speed (ksps)
125
Analog Comparators
3
Resistive Touch Screen
No
Dac Channels
1
Dac Resolution (bits)
10
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
1
Eeprom (bytes)
512
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 105
I/o Supply Class
2.7 to 5.5
Operating Voltage (vcc)
2.7 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
5
Output Compare Channels
16
Input Capture Channels
1
Pwm Channels
12
32khz Rtc
No
Calibrated Rc Oscillator
Yes

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7710F–AVR–09/11
Table 6-1.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEWE is cleared. The interrupt will not be generated during EEPROM write or SPM.
• Bit 2 – EEMWE: EEPROM Master Write Enable
The EEMWE bit determines whether setting EEWE to one causes the EEPROM to be written.
When EEMWE is set, setting EEWE within four clock cycles will write data to the EEPROM at
the selected address If EEMWE is zero, setting EEWE will have no effect. When EEMWE has
been written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEWE bit for an EEPROM write procedure.
• Bit 1 – EEWE: EEPROM Write Enable
The EEPROM Write Enable Signal EEWE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEWE bit must be written to one to write the value into the
EEPROM. The EEMWE bit must be written to one before a logical one is written to EEWE, oth-
erwise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See
Support – Read-While-Write Self-Programming” on page 267
programming.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
EEPM1
1. Wait until EEWE becomes zero.
2. Wait until SPMEN (Store Program Memory Enable) in SPMCSR (Store Program Mem-
3. Write new EEPROM address to EEAR (optional).
4. Write new EEPROM data to EEDR (optional).
5. Write a logical one to the EEMWE bit while writing a zero to EEWE in EECR.
6. Within four clock cycles after setting EEMWE, write a logical one to EEWE.
0
0
1
1
ory Control and Status Register) becomes zero.
EEPM0
0
1
0
1
EEPROM Mode Bits
Programming
3.4 ms
1.8 ms
1.8 ms
Time
Operation
Erase and Write in one operation (Atomic Operation)
Erase Only
Write Only
Reserved for future use
AT90PWM216/316
for details about Boot
“Boot Loader
22

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