BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 10
BUK6C2R1-55C
Manufacturer Part Number
BUK6C2R1-55C
Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6C2R1-55C.pdf
(13 pages)
NXP Semiconductors
8. Revision history
Table 7.
BUK6C2R1-55C
Product data sheet
Document ID
BUK6C2R1-55C v.3
Modifications:
BUK6C2R1-55C v.2
Revision history
Release date
20120118
20111221
•
Status changed from preliminary to product.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
Data sheet status
Product data sheet
Preliminary data sheet
N-channel TrenchMOS intermediate level FET
Change notice
-
-
BUK6C2R1-55C
Supersedes
BUK6C2R1-55C v.2
BUK6C2R1-55C v.1
© NXP B.V. 2012. All rights reserved.
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