BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 2

• Manufacturer Part Number: BUK6C2R1-55C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK6C2R1-55C
Product data sheet
Pin
1
2
3
4
5
6
7
mb
Type number
BUK6C2R1-55C
It is not possible to connect to pin 4 of the SOT427 package.
Symbol Description
G
S
S
D
S
S
S
D
Pinning information
Ordering information
gate
source
source
drain
source
source
source
mounting base;
connected to drain
Table 1.
Package
Name
D2PAK
Symbol
Dynamic characteristics
Q
Avalanche ruggedness
E
[1]
DS(AL)S
GD
Quick reference data
Parameter
gate-drain charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (D2PAK); 7 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
Simplified outline
SOT427 (D2PAK)
…continued
1
Conditions
I
V
see
see
I
R
T
2
D
D
j(init)
GS
GS
3
mb
= 180 A; V
= 120 A; V
4
5
Figure
Figure 14
= 10 V;
= 50 Ω; V
6
= 25 °C; unclamped
N-channel TrenchMOS intermediate level FET
7
13;
DS
sup
GS
= 44 V;
≤ 55 V;
= 10 V;
Graphic symbol
BUK6C2R1-55C
Min
-
-
mbb076
G
Typ
79
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT427
Max
-
770
Unit
nC
mJ
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