BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 5

• Manufacturer Part Number: BUK6C2R1-55C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK6C2R1-55C
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
I
see
I
see
I
see
V
T
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
S
S
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 80 A; V
= 50 A; dI
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 2.5 mA; V
= 1 mA; V
= 180 A; V
= 180 A; V
= 180 A; V
Figure
Figure 10
Figure 10
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure
Figure
Figure 16
= 55 V; V
= 55 V; V
= 30 V; R
= 30 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 5 V; I
= 4.5 V; I
= 0 V; V
10 V; I
= 10 Ω
Rev. 3 — 18 January 2012
9; see
11; see
13; see
13; see
13; see
D
D
GS
S
DS
DS
DS
D
DS
DS
DS
/dt = -100 A/µs; V
= 90 A; T
= 90 A; T
D
j
GS
GS
DS
L
DS
GS
GS
DS
= 25 °C
= 90 A; T
= 0 V; T
= V
= V
= 90 A; T
Figure 15
= 0.3 Ω; V
= 25 V; f = 1 MHz;
= 44 V; V
= 44 V; V
= 44 V; V
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
GS
GS
Figure 12
Figure 14
Figure 14
Figure 14
GS
; T
; T
j
j
j
; T
= 25 °C;
= 25 °C;
= 175 °C;
j
j
j
j
j
j
j
= 25 °C;
= -55 °C;
= 25 °C;
j
j
GS
GS
GS
j
= 25 °C;
GS
= 25 °C
= 175 °C
= 25 °C
j
= 25 °C
= -55 °C
= 25 °C
= 175 °C;
N-channel TrenchMOS intermediate level FET
= 10 V;
= 5 V;
= 10 V;
= 10 V;
GS
= 0 V;
Min
55
50
1.8
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK6C2R1-55C
Typ
-
-
2.3
-
-
0.04
-
2
2
1.9
2.4
2.6
-
253
140
40
79
12000
1075
730
43
206
412
190
0.8
56
115
© NXP B.V. 2012. All rights reserved.
Max
-
-
2.8
-
3.3
1
500
100
100
2.3
3.1
3.7
5.7
-
-
-
-
16000
1290
1000
-
-
-
-
1.2
-
-
µA
µA
mΩ
mΩ
mΩ
nC
pF
ns
V
Unit
V
V
V
V
V
nA
nA
mΩ
nC
nC
nC
pF
pF
ns
ns
ns
ns
nC
5 of 13