BUK7107-55AIE NXP Semiconductors, BUK7107-55AIE Datasheet - Page 10

• Manufacturer Part Number: BUK7107-55AIE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7107-55AIE_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-sense current as a function of
I D /I sense
600
550
500
450
400
120
100
(A)
I D
80
60
40
20
0
function of gate-source voltage; typical values
gate-source voltage; typical values
4
0
8
2
12
175 °C
4
16
T j = 25 °C
V GS (V)
V GS (V)
03nj27
03ni70
20
Rev. 02 — 10 February 2009
6
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Reverse diode current as a function of reverse
V GS
(V)
100
(A)
I S
80
60
40
20
10
0
8
6
4
2
0
0.0
gate charge; typical values
diode voltage; typical values
0
N-channel TrenchPLUS standard level FET
0.2
V DS = 14 V
40
BUK7107-55AIE
0.4
175 °C
0.6
80
V DS = 44 V
Q G (nC)
© NXP B.V. 2009. All rights reserved.
0.8
T j = 25 °C
V SD (V)
03nf25
03ni72
120
1.0
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