BUK7107-55AIE NXP Semiconductors, BUK7107-55AIE Datasheet - Page 2

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7107-55AIE

Manufacturer Part Number
BUK7107-55AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7107-55AIE
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7107-55AIE_2
Product data sheet
Pin
1
2
3
4
5
mb
Type number
BUK7107-55AIE
Symbol
G
ISENSE
D
KS
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
Sense current
drain
Kelvin source
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
Rev. 02 — 10 February 2009
Simplified outline
(D2PAK)
SOT426
1
N-channel TrenchPLUS standard level FET
2
mb
3
4 5
BUK7107-55AIE
Graphic symbol
g
MBL368
I sense
© NXP B.V. 2009. All rights reserved.
Version
SOT426
d
s
Kelvin source
2 of 14

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