BUK7107-55AIE NXP Semiconductors, BUK7107-55AIE Datasheet - Page 6

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7107-55AIE

Manufacturer Part Number
BUK7107-55AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7107-55AIE
Manufacturer:
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Quantity:
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NXP Semiconductors
6. Characteristics
Table 6.
BUK7107-55AIE_2
Product data sheet
Symbol
Static characteristics
V
V
I
V
I
R
I
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
D
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
(BR)GSS
DSon
iss
oss
rss
/I
G(tot)
GS
GD
sense
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate-source breakdown
voltage
gate leakage current
drain-source on-state
resistance
ratio of drain current to
sense current
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
I
T
I
T
V
V
V
V
V
see
V
see
V
I
T
V
T
V
R
from upper edge of drain mounting base to
centre of die; T
from source lead to source bond pad;
T
D
D
D
D
D
G
G
D
j
j
j
j
j
DS
DS
DS
DS
DS
DS
GS
GS
GS
GS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
> -55 °C
> -55 °C
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 °C
= 1 mA; V
= -1 mA; V
Figure 9
Figure 9
Figure 9
Figure
Figure
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
> 10 V; T
= 0 V; V
= 10 Ω; T
Rev. 02 — 10 February 2009
7; see
7; see
DS
DS
DS
DS
GS
GS
GS
GS
DS
DS
D
D
DS
GS
GS
j
L
= 50 A; T
= 50 A; T
> -55 °C; T
= 44 V; V
j
= V
= V
= V
= 0 V; T
Figure 14
Figure 12
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
= 25 °C
= 0 V; T
j
= 0 V; T
= 0 V; T
= 25 °C
Figure 8
Figure 8
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
j
j
j
j
j
GS
j
< 175 °C;
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
< 175 °C;
j
j
GS
= 25 °C
= 175 °C
= 25 °C
= 175 °C
j
= 25 °C
= 175 °C
j
j
< 175 °C
= 10 V;
= 25 °C
= -55 °C
= 10 V;
N-channel TrenchPLUS standard level FET
BUK7107-55AIE
Min
55
50
2
1
-
-
-
20
20
-
-
-
-
-
-
450
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.1
-
22
22
22
22
-
-
5.8
-
500
116
19
50
4500
960
510
36
115
159
111
2.5
7.5
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
-
4.4
10
250
-
-
1000
1000
10
10
7
14
550
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
V
V
nA
nA
µA
µA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
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