BUK7575-55A NXP Semiconductors, BUK7575-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7575-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7575-55A
Product data sheet
Fig 5.
Fig 7.
V
(A)
(V)
I
GS
D
60
50
40
30
20
10
10
0
8
6
4
2
0
function of drain-source voltage; typical values
charge; typical values
Output characteristics; drain current as a
Gate-source voltage as a function of gate
0
0
V
DD
= 14 V
2
5
4
V
GS
(V) = 16
6
10
V
14
DD
Q
G
All information provided in this document is subject to legal disclaimers.
8
= 44 V
(nC)
V
DS
03nc09
03nc05
20
(V)
Rev. 02 — 4 February 2011
10
15
12
10.5
9.5
8.5
7.5
6.5
5.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
160
140
120
100
80
60
40
−1
−2
−3
−4
−5
−6
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
Sub-threshold drain current as a function of
5
0
N-channel TrenchMOS standard level FET
10
2
min
BUK7575-55A
typ
15
4
V
max
V
© NXP B.V. 2011. All rights reserved.
GS
GS
(V)
(V)
03aa35
03nc08
20
6
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