BUK7575-55A NXP Semiconductors, BUK7575-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7575-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7575-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
25
20
15
10
5
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
T
j
2
= 175 °C
0
4
60
T
max
min
typ
j
= 25 °C
6
120
All information provided in this document is subject to legal disclaimers.
8
T
V
j
GS
(°C)
03nc07
03aa32
(V)
Rev. 02 — 4 February 2011
180
10
Fig 10. Reverse diode current as a function of reverse
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
S
120
100
180
160
140
120
100
80
60
40
20
80
60
40
0
diode voltage; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
5.5
10
6 6.5
0.5
T
j
20
= 175 °C
7
BUK7575-55A
1.0
8 V
30
GS
T
j
(V) = 10
= 25 °C
1.5
© NXP B.V. 2011. All rights reserved.
40
V
SD
I
D
03nc04
03nc10
(V)
(A)
2.0
50
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