BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet - Page 3

• Manufacturer Part Number: BUK7608-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7608-40B_4
Product data sheet
Symbol
Avalanche ruggedness
E
Fig 1.
Fig 3.
DS(AL)S
(A)
(A)
I
I
D
D
120
10
10
80
40
10
0
1
3
2
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
Limiting values
Parameter
non-repetitive
drain-source avalanche
energy
(1)
50
[1]
[2]
…continued
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
100
Conditions
I
T
D
j(init)
150
= 75 A; V
T
Limit R
= 25 °C; unclamped
003aac081
mb
1
(1)
(°C)
Rev. 04 — 24 September 2008
DSon
200
sup
= V
≤ 40 V; R
DS
/ I
D
GS
Fig 2.
= 50 Ω; V
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
GS
= 10 V;
10
50
BUK7608-40B
100
V
DS
(V)
Min
-
100 μs
1 ms
10 ms
100 ms
t
p
DC
150
= 10 μs
© NXP B.V. 2008. All rights reserved.
T
003aac070
003aac079
mb
Max
241
(°C)
200
10
2
Unit
mJ
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