BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet - Page 6

• Manufacturer Part Number: BUK7608-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7608-40B_4
Product data sheet
Fig 5.
Fig 7.
R
(mΩ)
DSon
(A)
I
D
300
200
100
16
12
0
8
4
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
20
14
12
6.0
2
6.5
100
7.0
4
V
GS
(V) = 10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
8.0
6
200
V
GS
I
8
D
(V) = 10
003aac076
003aac077
V
(A)
DS
20
(V)
Rev. 04 — 24 September 2008
300
10
Fig 6.
Fig 8.
(S)
(A)
g
I
D
fs
100
60
40
20
75
50
25
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
2
T
20
j
= 175 °C
BUK7608-40B
4
40
25 °C
6
© NXP B.V. 2008. All rights reserved.
I
D
V
003aac073
003aac074
(A)
GS
(V)
60
8
6 of 12