BUK9610-100B NXP Semiconductors, BUK9610-100B Datasheet - Page 4

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9610-100B

Manufacturer Part Number
BUK9610-100B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK9610-100B
Manufacturer:
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Part Number:
BUK9610-100B
Manufacturer:
NXP
Quantity:
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NXP Semiconductors
BUK9610-100B
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
Capped at 75 A due to package
Limit R
DSon
= V
DS
All information provided in this document is subject to legal disclaimers.
/I
D
10
Rev. 03 — 31 January 2011
DC
10
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
N-channel TrenchMOS logic level FET
V
DS
(V)
BUK9610-100B
02ng68
10
3
© NXP B.V. 2011. All rights reserved.
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