BUK9610-100B NXP Semiconductors, BUK9610-100B Datasheet - Page 5

• Manufacturer Part Number: BUK9610-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9610-100B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 03 — 31 January 2011
−4
Conditions
see
mounted on a printed-circuit
board ; minimum footprint
Figure 4
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
10
t
p
−1
T
BUK9610-100B
t
p
δ =
Min
-
-
(s)
03ng69
T
t
t
p
1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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