BUK9610-100B NXP Semiconductors, BUK9610-100B Datasheet - Page 8

• Manufacturer Part Number: BUK9610-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9610-100B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
80
60
40
20
15
14
13
12
11
10
0
9
8
0.0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0.5
50
V
GS
= 3 V
100
1.0
T
j
3.2 3.4 3.6
= 175 °C
150
1.5
200
2.0
4
T
All information provided in this document is subject to legal disclaimers.
250
2.5
j
= 25 °C
V
5 10
I
GS
03ng63
D
03ng66
(A)
(V)
Rev. 03 — 31 January 2011
300
3.0
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
2.8
2.1
1.4
0.7
a
0
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9610-100B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
03ng41
(°C)
03ng52
180
180
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