PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 3

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD38N02LT_2
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(A)
(%)
120
10
I
10
D
der
10
80
40
0
3
2
1
function of mounting base temperature
T
P
0
1
mb
der
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
Limit R
tot
DM
is single pulse; V
DSon
100 %
100
= V
DS
/ I
D
150
GS
= 5 V
DC
T
03aa16
mb
( C)
Rev. 02 — 2 February 2007
200
10
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of mounting base temperature
I
0
der
=
t
100 s
1 ms
10 ms
p
------------------- -
I
N-channel TrenchMOS logic level FET
= 10 s
D 25 C
I
50
D
V
DS
(V)
100 %
100
PHD38N02LT
150
© NXP B.V. 2007. All rights reserved.
T
003aab706
mb
03aa24
( C)
10
200
2
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