PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 8

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD38N02LT_2
Product data sheet
Fig 13. Source current as a function of source-drain
(A)
I
S
25
20
15
10
5
0
T
voltage; typical values
0
j
V
= 25 C and 175 C; V
GS
= 0 V
0.3
175 C
0.6
GS
= 0 V
T
j
= 25 C
0.9
003aab712
V
SD
(V)
Rev. 02 — 2 February 2007
1.2
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
V
as a function of drain-source voltage; typical
values
GS
-1
= 0 V; f = 1 MHz
N-channel TrenchMOS logic level FET
1
PHD38N02LT
10
V
© NXP B.V. 2007. All rights reserved.
DS
C
C
C
003aab711
iss
oss
rss
(V)
10
2
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