PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 5

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
PHD38N02LT_2
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Characteristics
Conditions
I
I
V
V
V
I
see
V
see
V
R
I
D
D
D
S
DS
GS
GS
GS
DS
G
T
T
T
T
T
T
T
T
T
= 25 A; V
= 250 A; V
= 250 A; V
= 25 A; V
j
j
j
j
j
j
j
j
j
= 5.6
Figure 11
Figure 14
= 20 V; V
= 10 V; I
= 12 V; V
= 5 V; I
= 0 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
Rev. 02 — 2 February 2007
D
GS
DS
DS
D
= 25 A; see
GS
GS
DS
and
= 25 A; V
= 10 V; V
= 0 V; see
DS
= 20 V; f = 1 MHz;
= 0 V
= V
= 0 V
= 0 V
12
GS
; see
GS
GS
Figure 13
Figure 6
= 5 V;
= 10 V;
Figure 9
and
N-channel TrenchMOS logic level FET
and
8
10
PHD38N02LT
Min
20
18
0.5
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.0
-
-
0.05
-
10
13.5
24.3
15.1
4.5
4.2
800
260
190
4
12.5
30
23
0.98
© NXP B.V. 2007. All rights reserved.
Max
-
-
1.5
-
1.8
1.0
500
100
16
28.8
-
-
-
-
-
-
-
-
-
-
1.2
5 of 12
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A