PHD38N02LT NXP Semiconductors, PHD38N02LT Datasheet - Page 6

• Manufacturer Part Number: PHD38N02LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHD38N02LT_2
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
30
20
10
25
20
15
10
0
5
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
j
0
j
T
= 25 C
= 25 C and 175 C; V
j
= 25 C
0.2
10 V 5 V
175 C
1
0.4
3 V
DS
T
j
0.6
> I
= 25 C
D
2
2.6 V
R
V
DSon
GS
0.8
V
003aab708
003aab709
GS
= 1.6 V
V
DS
(V)
2.4 V
2.2 V
1.8 V
2 V
(V)
Rev. 02 — 2 February 2007
1
3
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
1.5
0.5
30
20
10
0
2
1
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
T
0
j
= 25 C
j
=
= 25 C
----------------------------- -
R
DSon 25 C
R
N-channel TrenchMOS logic level FET
DSon
0
10
60
PHD38N02LT
V
20
GS
120
= 2.4 V
© NXP B.V. 2007. All rights reserved.
I
D
003aab710
T
(A)
j
03af18
( C)
2.6 V
10 V
3 V
5 V
180
30
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