PHP45NQ11T NXP Semiconductors, PHP45NQ11T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP45NQ11T

Manufacturer Part Number
PHP45NQ11T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PHP45NQ11T
Manufacturer:
NXP
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Part Number:
PHP45NQ11T
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
PHP45NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 19 November 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
Figure 11
Figure 9
= 25 °C; V
= 25 °C; see
= 80 V; T
= 10 V; I
= 10 V; I
j
D
D
and
and
≤ 175 °C
j
= 25 °C;
GS
= 45 A;
= 25 A;
3
Figure 2
10
= 10 V;
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
23.2
19
Max
105
47
150
-
25
Unit
V
A
W
nC
mΩ

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PHP45NQ11T Summary of contents

Page 1

... PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 19 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... TO-220AB PHP45NQ11T_2 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT78 (TO-220AB) Rev. 02 — 19 November 2009 PHP45NQ11T Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...

Page 3

... GS p 03aa24 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET Min Max - 105 - 105 - and Figure 3 - 188 - 150 ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PHP45NQ11T_2 Product data sheet = DSon Conditions see Figure 4 vertical in still air - Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03aq49 = 10 μ 100 μ (V) DS Min Typ Max - - ...

Page 5

... °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET Min Typ Max 105 - - 4 500 - ...

Page 6

... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03am92 175 ° ° (V) GS 03aa32 max typ min 0 60 120 T (°C) j © ...

Page 7

... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03al21 0 60 120 T (°C) j 03am94 C iss C oss C rss (V) DS © ...

Page 8

... Fig 13. Source current as a function of source-drain voltage; typical values PHP45NQ11T_2 Product data sheet ( 175 ° ° 0 Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03am93 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...

Page 9

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. ...

Page 10

... Legal texts have been adapted to the new company name where appropriate. PHP45NQ11T_1 20040331 PHP45NQ11T_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product specification - Rev. 02 — 19 November 2009 PHP45NQ11T Supersedes PHP45NQ11T_1 - © NXP B.V. 2009. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 November 2009 Document identifier: PHP45NQ11T_2 All rights reserved. ...

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