PHP45NQ11T NXP Semiconductors, PHP45NQ11T Datasheet - Page 4

• Manufacturer Part Number: PHP45NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP45NQ11T_2
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
Thermal characteristics
δ = 0.5
0.2
0.05
0.02
0.1
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
single pulse
(A)
I
D
10
10
10
1
3
2
1
10
-4
Limit R
Conditions
see
vertical in still air
DSon
Figure 4
= V
DS
Rev. 02 — 19 November 2009
10
DC
10
/ I
D
-3
10
-2
10
N-channel TrenchMOS standard level FET
100 μs
1 ms
10 ms
2
t
p
= 10 μs
V
DS
(V)
Min
-
-
10
PHP45NQ11T
-1
03aq49
P
10
Typ
-
60
3
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
Max
1
-
03am88
T
t
p
t
1
Unit
K/W
K/W
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