PHP45NQ11T NXP Semiconductors, PHP45NQ11T Datasheet - Page 7

• Manufacturer Part Number: PHP45NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP45NQ11T_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
DSon
V
(V)
0.15
0.05
GS
0.2
0.1
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
V
4
D
j
DD
= 45 A
= 25 °C
4.2
= 80 V
4.4
20
5
4.6
10
40
4.8
15
60
T
V
j
GS
Q
= 25 °C
G
(V) =
I
03am91
D
03am95
(nC)
(A)
Rev. 02 — 19 November 2009
10
5
20
80
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS standard level FET
0
1
60
PHP45NQ11T
10
120
© NXP B.V. 2009. All rights reserved.
V
DS
T
j
C
C
C
(°C)
03am94
(V)
03al21
iss
oss
rss
180
10
2
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