PHP45NQ11T NXP Semiconductors, PHP45NQ11T Datasheet - Page 3

• Manufacturer Part Number: PHP45NQ11T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHP45NQ11T_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
GS
GS
GS
GS
150
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
T
= 50 Ω; t
mb
03aa24
(°C)
Rev. 02 — 19 November 2009
200
j
p
≤ 175 °C
j
mb
mb
j(init)
≥ 25 °C; R
= 120 µs; unclamped
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 18 A; V
P
Figure 1
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
N-channel TrenchMOS standard level FET
and
sup
≤ 100 V;
3
50
100
PHP45NQ11T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
105
105
20
33
47
188
150
175
175
47
188
160
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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