PMGD780SN NXP Semiconductors, PMGD780SN Datasheet - Page 11
![Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology](/photos/41/52/415236/sot363_3d_sml.gif)
PMGD780SN
Manufacturer Part Number
PMGD780SN
Description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMGD780SN.pdf
(14 pages)
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9. Revision history
Table 6.
PMGD780SN_2
Product data sheet
Document ID
PMGD780SN_2
Modifications:
PMGD780SN_1
Revision history
Release date
20100419
20040211
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5
Section 10 “Legal
“Characteristics”: added V
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
information”: updated
Rev. 02 — 19 April 2010
GS(th)
Dual N-channel μTrenchMOS standard level FET
maximum value at condition T
Change notice
-
-
PMGD780SN
Supersedes
PMGD780SN_1
-
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
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