PMGD780SN NXP Semiconductors, PMGD780SN Datasheet - Page 3

• Manufacturer Part Number: PMGD780SN
• Description: Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMGD780SN_2
Product data sheet
Fig 1.
Fig 3.
(A)
I D
10 -1
10 -2
10 -3
P
(%)
der
10
120
1
80
40
10 -1
0
0
Normalized total power dissipation as a
function of solder point temperature
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
sp
der
= 25 °C; I
=
---------------------- -
P
tot 25 C
50
P
(
DM
tot
°
is single pulse; V
)
×
100
100%
Limit R DSon = V DS / I D
150
GS
All information provided in this document is subject to legal disclaimers.
T
= 10 V
sp
1
03aa17
(°C)
200
Rev. 02 — 19 April 2010
Fig 2.
Dual N-channel μTrenchMOS standard level FET
(%)
I
der
120
80
40
0
DC
0
Normalized continuous drain current as a
function of solder point temperature
I
der
=
10
------------------ -
I
D 25 C
50
(
I
D
°
)
×
100%
100
PMGD780SN
V DS (V)
150
© NXP B.V. 2010. All rights reserved.
T
t p = 10 μ s
sp
100 μ s
1 ms
10 ms
100 ms
03aa25
(°C)
03an22
200
10 2
3 of 14