PMGD780SN NXP Semiconductors, PMGD780SN Datasheet - Page 9
![Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology](/photos/41/52/415236/sot363_3d_sml.gif)
PMGD780SN
Manufacturer Part Number
PMGD780SN
Description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMGD780SN.pdf
(14 pages)
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7. Package outline
Fig 14. Package outline SOT363 (SC-88)
PMGD780SN_2
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
Rev. 02 — 19 April 2010
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
Dual N-channel μTrenchMOS standard level FET
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
PMGD780SN
0.1
y
A
c
© NXP B.V. 2010. All rights reserved.
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
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