PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 3

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10189
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
T
P
I D
P der
10 -1
10 -2
10 -3
sp
der
(%)
10 2
10
120
1
80
40
function of solder point temperature.
= 25 C; I
0
10 -1
=
0
----------------------
P
tot 25 C
P
tot
DM
is single pulse.
Limit R DSon = V DS / I D
50
100%
100
150
T sp ( C)
1
03aa17
Rev. 01 — 27 September 2002
200
DC
Fig 2. Normalized continuous drain current as a
I
I der
(%)
der
120
80
40
function of solder point temperature.
0
=
0
------------------ -
I
D 25 C
I
10
D
50
100%
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
t p = 10 s
100 s
1 ms
10 ms
100 ms
100
V DS (V)
PMN27UN
150
T sp ( C)
03aj57
03aa25
10 2
200
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