PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 4

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 10189
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z th(j-sp)
(K/W)
10 -1
10 2
10
1
thermal resistance from junction to solder point mounted on a metal clad board;
10 -4
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
7.1 Transient thermal impedance
10 -3
10 -2
Rev. 01 — 27 September 2002
Conditions
10 -1
1
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Figure 4
10
P
t p
PMN27UN
t p (s)
Min Typ Max Unit
-
T
03aj56
=
-
t p
T
t
10 2
70
4 of 12
K/W