PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 8

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10189
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
20
15
10
5
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.5
150 C
GS
= 0 V
T j = 25 C
1
V SD (V)
03aj61
Rev. 01 — 27 September 2002
1.5
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 3.8 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 3.8 A
T j = 25 C
V DD = 10 V
DD
= 10 V
TrenchMOS™ ultra low level FET
4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8
PMN27UN
Q G (nC)
03aj63
12
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